ZVNL110GTA
Увеличить
Краткое описание:
N-Channel MOSFET, 100V, 600mA, 4.5R, SOT-223
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET for power applications. Features 100V drain-source voltage, 600mA continuous drain current, and 4.5 Ohm drain-source on-resistance. This single-element transistor offers a 2W power dissipation and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-223 surface-mount case, it is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Package/Case | SOT-223 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 75pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.5R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
