ZVP2106GTA
Увеличить
Краткое описание:
P-Channel MOSFET, 60V, 450mA, 5R, SOT-223
Дополнительная информация
P-channel MOSFET, 60V drain-source voltage, 450mA continuous drain current, and 5 Ohm drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and a 20V gate-to-source voltage. It is supplied in a SOT-223 surface-mount package, offering a maximum power dissipation of 2W and operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Nominal Vgs | -3.5V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | -450mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Input Capacitance | 100pF |
| Power Dissipation | 200mW |
| Threshold Voltage | -3.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | -60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
