ZVP2110GTC
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Дополнительная информация
Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Package/Case | SOT-223 |
| RoHS Compliant | No |
| Package Quantity | 4000 |
| Input Capacitance | 100pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 310mA |
| Drain to Source Voltage (Vdss) | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
