ZXMC3A16DN8TC
Производится
Увеличить
Краткое описание:
N/P-Channel JFET, 30V, 4.1A ID, 35mR Rds(on), SOIC-8
Дополнительная информация
N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, SOIC-8 package. Features 30V Drain to Source Voltage (Vdss), 4.1A Continuous Drain Current (ID), and 35mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.25W. Includes 3ns Turn-On Delay Time and 9.4ns Fall Time. Surface mount device, RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOIC |
| Current Rating | 6.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 796pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 48mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
