ZXMC3A18DN8TA
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Краткое описание:
N/P-CH MOSFET 30V 4.8A 25mR SOIC
Дополнительная информация
Dual N-channel and P-channel MOSFET for surface mount applications. Features 30V drain-source voltage, 4.8A continuous drain current, and 25mΩ drain-source resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in an 8-SOIC case, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | 7.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 500 |
| Input Capacitance | 1.8nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 4.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 30V |
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