ZXMC6A09DN8TA
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Краткое описание:
60V 5.1A N/P-Channel MOSFET SOIC
Дополнительная информация
N-Channel and P-Channel MOSFET, 60V Drain-Source Voltage, 5.1A Continuous Drain Current, and 45mR Max Drain-Source On Resistance. This surface-mount silicon FET features a 2-element configuration within an SOIC package, offering a 2.1W Max Power Dissipation and operating across a -55°C to 150°C temperature range. Key switching characteristics include a 4.6ns Turn-On Delay Time and a 23ns Fall Time, with a 20V Gate-Source Voltage rating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Resistance | 55mR |
| Package/Case | SOIC |
| Current Rating | 5.1A |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.407nF |
| Power Dissipation | 2.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 4.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 55mR |
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