ZXMD63C03XTA
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Краткое описание:
N/P-Ch JFET, 30V, 2A, 185mR, MSOP-8
Дополнительная информация
Surface mount N-channel and P-channel silicon Metal-oxide Semiconductor FET (MOSFET) with 30V drain-source voltage and 2-element configuration. Features a maximum continuous drain current of -2A and a low drain-source on-resistance of 135mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.04W. Packaged in MSOP with 290pF input capacitance and fast switching times, including a 2.6ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 4.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 135mR |
| Package/Case | MSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 290pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.04W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 185mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 185mR |
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