ZXMD63N03XTC
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Краткое описание:
N-Channel JFET, 30V, 2.3A, 135mR, MSOP-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, MSOP-8 package, featuring 30V Drain to Source Voltage (Vdss) and 2.3A Continuous Drain Current (ID). Offers 135mR Drain to Source Resistance (Rds On Max) and operates with a Gate to Source Voltage (Vgs) up to 20V. This 2-element JFET exhibits fast switching characteristics with a 2.5ns Turn-On Delay Time and 4.1ns Fall Time. Designed for surface mount applications, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4.1ns |
| Packaging | Tape and Reel |
| Rds On Max | 135mR |
| Package/Case | MSOP |
| RoHS Compliant | Yes |
| Package Quantity | 4000 |
| Input Capacitance | 290pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.5ns |
| Turn-Off Delay Time | 9.6ns |
| Max Power Dissipation | 870mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 30V |
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