ZXMHC6A07T8TA
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Краткое описание:
60V 1.8A N/P-Channel MOSFET, 300mR RdsOn, SM8
Дополнительная информация
N-Channel and P-Channel MOSFET, 60V Vdss, 1.8A continuous drain current, and 425mR maximum drain-source on-resistance. This 4-element silicon Metal-oxide Semiconductor FET features a 3V threshold voltage and a 20V gate-to-source voltage. Packaged in an 8-pin SM8 surface-mount case, it offers a 1.7W maximum power dissipation and operates between -55°C and 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| FET Type | 2 N and 2 P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 5.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.8A |
| Output Current | 2.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 166pF |
| Threshold Voltage | 3V |
| Number of Channels | 4 |
| Turn-On Delay Time | 1.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 425mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 425mR |
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