ZXMN10A08DN8TA
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Краткое описание:
100V 2.1A N-Channel MOSFET SOIC, 250mR RdsOn
Дополнительная информация
N-Channel MOSFET, 100V Vdss, 2.1A continuous drain current, and 250mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a 1-element, N-channel configuration with a maximum power dissipation of 1.8W. Packaged in an SOIC surface-mount case, it offers a 2.2ns fall time and 3.4ns turn-on delay time. Operating temperature range is -55°C to 150°C, with RoHS and REACH SVHC compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 2.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Package/Case | SOIC |
| Current Rating | 2.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 500 |
| Input Capacitance | 405pF |
| Power Dissipation | 1.8W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
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