ZXMN10A09KTC
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Краткое описание:
N-Channel MOSFET, 100V, 7.7A, 85mR, TO-252
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss), 7.7A Continuous Drain Current (ID), and 85mΩ maximum Drain-Source On-Resistance (Rds On). Features include a TO-252-3 (DPAK) surface-mount package, 10.1W maximum power dissipation, and operating temperatures from -55°C to 150°C. This silicon Metal-oxide Semiconductor FET offers fast switching with turn-on delay of 6.8ns and fall time of 12.3ns. It is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 12.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Package/Case | TO-252-3 |
| Current Rating | 7.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.313nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 6.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 10.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 85mR |
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