ZXMN10A11KTC
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Краткое описание:
N-Channel MOSFET, 100V, 3.5A, 350mR, DPAK, Surface Mount
Дополнительная информация
N-channel MOSFET, 100V Drain-Source Voltage (Vdss), 3.5A Continuous Drain Current (ID), and 350mΩ maximum Drain-Source On-Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a DPAK-3 (TO-252-3) surface-mount package, 2.7ns turn-on delay, and 7.4ns turn-off delay. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.11W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 274pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.11W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 350mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 350mR |
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