ZXMN10A25KTC
Увеличить
Краткое описание:
N-Channel MOSFET, 100V, 6.4A, 125mR Rds On, DPAK
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss), 6.4A Continuous Drain Current (ID), and 125mΩ Max Drain-Source On-Resistance (Rds On). This single-element silicon Metal-oxide Semiconductor FET features a DPAK-3 package for surface mounting, with a nominal gate-source threshold voltage of 4V and a maximum gate-source voltage of 20V. It offers a maximum power dissipation of 2.11W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 859pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.9ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.7ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.11W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 125mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
