ZXMN20B28K
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Краткое описание:
N-CH MOSFET 200V 2.3A TO-252 DPAK SMT Power
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-252AA DPAK package. Features a maximum drain-source voltage of 200V and a continuous drain current of 2.3A. Offers a low drain-source on-resistance of 750mΩ at 10V. Designed for surface mounting with gull-wing leads, this single-element transistor boasts a maximum power dissipation of 10200mW and operates across a temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.39(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 10200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 8.1@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 750@10VmOhm |
| Typical Input Capacitance @ Vds | 358@25VpF |
| Maximum Continuous Drain Current | 2.3A |
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