ZXMN2A02N8TA
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Краткое описание:
N-Channel MOSFET, 20V, 10.2A, 20mR Rds On, SOIC
Дополнительная информация
N-Channel MOSFET, SOIC package, featuring 20V Drain-Source Breakdown Voltage and 10.2A Continuous Drain Current. Offers a low 20mΩ Drain-Source On-Resistance (Rds On Max) and 1.9nF Input Capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.56W. This surface-mount component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOIC |
| Current Rating | 10.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 1.9nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 10.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 20mR |
| Drain to Source Breakdown Voltage | 20V |
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