ZXMN3B04N8TA
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Краткое описание:
N-Channel MOSFET, 30V, 8.9A, 25mR, SOIC, N-Channel
Дополнительная информация
N-Channel MOSFET, 30V Vdss, 7.6A continuous drain current, and 25mΩ maximum drain-source on-resistance. This surface-mount SOIC package features a 1.5mm height, 5mm length, and 4mm width, with a maximum power dissipation of 3W. Operating temperature range is -55°C to 150°C. Key electrical characteristics include 2.48nF input capacitance, 9ns turn-on delay, and 16.6ns fall time. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | N-CHANNEL |
| Fall Time | 16.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | 7.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 2.48nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
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