ZXMN4A06KTC
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Краткое описание:
N-Channel MOSFET, 40V, 10.9A, 50mR Rds On, DPAK
Дополнительная информация
N-channel MOSFET, 40V drain-source voltage, 10.9A continuous drain current, and 50mΩ maximum drain-source on-resistance. Features a 3-lead DPAK surface-mount package with a maximum power dissipation of 2.15W. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 3.2ns and fall time of 10.9ns. This silicon Metal-oxide Semiconductor FET is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 10.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | TO-252-3 |
| Current Rating | 10.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1 |
| Input Capacitance | 827pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.9A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 50mR |
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