ZXMN6A08GTA
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Краткое описание:
60V N-Channel MOSFET, 5.3A ID, 80mR Rds On, SOT-223
Дополнительная информация
N-Channel MOSFET, 60V Drain-Source Voltage, 5.3A Continuous Drain Current, and 80mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-261AA package, suitable for surface mounting with dimensions of 6.7mm length, 3.7mm width, and 1.65mm height. It offers fast switching speeds with a 2.6ns turn-on delay and 4.6ns fall time, and operates within a temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant, packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-223 |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 459pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 80mR |
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