ZXMN6A25DN8TA
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Краткое описание:
N-Channel MOSFET, 60V, 5A, 50mR Rds On, SOIC-8
Дополнительная информация
N-Channel MOSFET, 60V Vds, 5A continuous drain current, and 50mΩ Rds(on). This surface-mount device features a 2-element configuration within an SOIC-8 package, offering a maximum power dissipation of 2.1W. It operates across a temperature range of -55°C to 150°C and includes lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | SOIC |
| Current Rating | 4.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 500 |
| Input Capacitance | 1.063nF |
| Power Dissipation | 2.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26.2ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 500mR |
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