ZXMN6A25KTC
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Краткое описание:
60V N-Channel MOSFET, 10.7A ID, 50mR Rds On, DPAK-3
Дополнительная информация
N-Channel Power MOSFET, 60V Vdss, 7A continuous drain current, and 50mΩ Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a DPAK-3 package for surface mounting, with a maximum power dissipation of 2.11W and an operating temperature range of -55°C to 150°C. Key electrical characteristics include a 1.063nF input capacitance and fast switching times with a 3.8ns turn-on delay. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 10.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.063nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26.2ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.11W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 50mR |
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