ZXMP10A18GTA
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Краткое описание:
P-Channel MOSFET, 100V, 3.7A, 150mR, SOT-223
Дополнительная информация
P-channel MOSFET, designed for power applications, features a -100V drain-source voltage and a maximum drain-source on-resistance of 150mΩ. This single-element transistor offers a continuous drain current of 3.7A and a maximum power dissipation of 3.9W. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 4.6ns and a fall time of 17.9ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Current | 37A |
| Voltage | 100V |
| Polarity | P-CHANNEL |
| Fall Time | 17.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | SOT-223 |
| Current Rating | -3.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1000 |
| Input Capacitance | 1.055nF |
| Power Dissipation | 3.9W |
| Threshold Voltage | -2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 150mR |
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