ZXMP6A16DN8TA
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Краткое описание:
P-Channel MOSFET, 60V, 3.9A, 85mR, SOIC-8
Дополнительная информация
P-channel power MOSFET featuring 60V drain-source voltage and 3.9A continuous drain current. Surface-mount SOIC-8 package offers 85mΩ drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 2.15W. Includes 2 elements, 1.021nF input capacitance, and fast switching times with 3.5ns turn-on and 10ns fall times. AEC-Q101 compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | Automotive, AEC-Q101 |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Package/Case | SOIC |
| Current Rating | -3.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 500 |
| Input Capacitance | 1.021nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 3.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 85mR |
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