ZXT13P12DE6TA
Увеличить
Краткое описание:
PNP BJT Transistor, 4A I(C), 12V V(BR)CEO, SOT-23-6
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Offers a transition frequency of 55MHz and a low collector-emitter saturation voltage of -150mV. Packaged in a SOT-23-6 surface mount case, this component operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 55MHz |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 55MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 55MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -29V |
| Collector-emitter Voltage-Max | 175mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -150mV |
