ZXTD4591E6TA
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NPN/PNP BJT, 60V, 1A, 150MHz, SOT-23, 2-Element
Дополнительная информация
Dual-element NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 1A maximum collector current, 60V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a SOT-23 surface-mount package, this RoHS compliant component offers a minimum hFE of 100 and operates across a temperature range of -55°C to 150°C. Maximum power dissipation is 1.7W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.75mm |
| Height | 1.3mm |
| Length | 3mm |
| Weight | 0.000529oz |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 150MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.7W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.7W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
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