ZXTP2025FTA
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PNP BJT Transistor, 5A, 50V, 190MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 5A continuous collector current, 50V collector-emitter breakdown voltage, and a 190MHz transition frequency. Housed in a 3-pin SOT-23 package, this component offers a maximum power dissipation of 1.56W and operates within a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 190MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 190MHz |
| Current Rating | -5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 190MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.56W |
| Gain Bandwidth Product | 190MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
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