ZXTPS717MC

ZXTPS717MC - Diodes
Увеличить
Краткое описание: PNP BJT 12V 4.4A DFN EP 8-Pin SMT Transistor

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 12V collector-emitter voltage and 4.4A continuous collector current. This single dual collector transistor offers a maximum power dissipation of 2450mW and a transition frequency of 110MHz (typical). Housed in an 8-pin DFN EP package with exposed pad, measuring 3x2x0.78mm, it operates from -55°C to 150°C.
PCB 8
ECCN EAR99
Type PNP
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 8
Lead Shape No Lead
Schedule B 8541290080
Package/Case DFN EP
Configuration Single Dual Collector
RoHS Versions 2011/65/EU
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Package Description Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.78
Package Length (mm) 3
Radiation Hardening No
Minimum DC Current Gain 300@10mA@2V|300@100mA@2V|[email protected]@2V|60@8A@2V|45@10A@2V
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 2450mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 4.4A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 110(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.