2DB1132R-13
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Краткое описание:
PNP BJT Transistor, 32V VCEO, 1A IC, 190MHz, SOT-89, SM
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 1A maximum collector current and 32V collector-emitter breakdown voltage. Operates with a transition frequency of 190MHz and a maximum power dissipation of 1W. Packaged in a surface-mount SOT-89 plastic package, suitable for tape and reel deployment. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Series | 2DB11 |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 190MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 190MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 190MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -125mV |
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