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PNP BJT Transistor, 30V, 1A, 300MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current (IC). Operates with a 300MHz Gain Bandwidth Product (fT) and a minimum hFE of 270. Packaged in a SOT-323 surface mount plastic package, this component offers a -55°C to 150°C operating temperature range and 500mW power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.15mm |
| Weight | 0.000212oz |
| hFE Min | 270 |
| Polarity | PNP |
| Frequency | 300MHz |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-323 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 380mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -380mV |
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