2DB1697-13
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PNP BJT Transistor, 12V VCEO, 2A IC, 140MHz fT, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 12V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 140MHz. Packaged in a SOT-89 surface-mount plastic package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| hFE Min | 270 |
| Polarity | PNP |
| Frequency | 140MHz |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Power Dissipation | 900mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -65mV |
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