2N2907A
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Краткое описание:
600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN
Дополнительная информация
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18
| RoHS | Yes |
| REACH | Compliant |
| HTS Code | 8541.21.00.75 |
| Eccn Code | EAR99 |
| Lead Free | No |
| Pin Count | 3 |
| Military Spec | False |
| Base Current (IB) | Max: 50 (Test: VCE = 60V, VBE = 0.5V)nA |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-206AA |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| DC Current Gain (hFE) | Min: 50 (Test: Ic = 500mA, VCE = 10V) |
| Collector Current (IC) | 600mA |
| Max Operating Temperature | 200 |
| Min Operating Temperature | -65 |
| Transition Frequency (fT) | Typ: 200 (Test: Ic = 50mA, VCE = 20V, f = 100MHz)MHz |
| Derate above 25°C (PD) (TA) | 2.28mW / °C |
| Derate above 25°C (PD) (TC) | 10.3mW / °C |
| Emitter - Base Voltage (VEBO) | -5V |
| Collector - Base Voltage (VCBO) | -60V |
| Collector Cut-off Current (ICBO) | Max: 0.01 (Test: VCB = 50V, IE = 0)μA |
| Collector Cut-off Current (ICEX) | Max: 50 (Test: VCE = 30V, VBE = 0.5V)nA |
| Collector - Emitter Voltage (VCEO) | -60V |
| Total Device Dissipation (PD) @ TA = 25°C | 400mW |
| Total Device Dissipation (PD) @ TC = 25°C | 1.8W |
| Emitter - Base Breakdown Voltage (V(BR)EBO) | Min: 5 (Test: Ie = 10μA, Ic = 0)V |
| Base - Emitter Saturation Voltage (VBE(sat)) | Max: 2.6 (Test: Ic = 500mA, Ic = 50mA)V |
| Collector - Base Breakdown Voltage (V(BR)CBO) | Min: 60 (Test: Ic = 10μA, IE = 0)V |
| Collector Cut-off Current (ICBO) @ TA = 150°C | Max: 10 (Test: TA = 150°C)μA |
| Collector - Emitter Saturation Voltage (VCE(sat)) | Max: 1.6 (Test: Ic = 500mA, IB = 50mA)V |
| Collector – Emitter Breakdown Voltage (V(BR)CEO) | Min: 60 (Test: Ic = 10mA, IB = 0)V |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -65 to +200°C |
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