2N3663

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2N3663 - Onsemi
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Краткое описание: NPN BJT, 2.1GHz RF Transistor, 12V, 50mA, TO-92
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN RF small signal bipolar junction transistor in a TO-92 package. Features a 12V collector-emitter breakdown voltage and a 50mA continuous collector current. Operates up to 2.1GHz with a minimum hFE of 20. Designed for through-hole mounting, this lead-free and RoHS compliant component offers a power dissipation of 350mW and an operating temperature range of -55°C to 150°C.
Gain 1.5dB
RoHS Compliant
Mount Through Hole
hFE Min 20
Polarity NPN
Frequency 2.1GHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 2.1GHz
Current Rating 50mA
RoHS Compliant Yes
DC Rated Voltage 12V
Package Quantity 2000
Power Dissipation 350mW
Number of Elements 1
Transition Frequency 2.1GHz
Max Collector Current 50mA
Max Power Dissipation 350mW
Gain Bandwidth Product 2.1GHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 50mA
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 12V
Collector Emitter Voltage (VCEO) 12V
Collector Emitter Breakdown Voltage 12V

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