2N4401TAR
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NPN BJT Transistor, 40V VCEO, 600mA IC, 250MHz, TO-92
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a 40V collector-emitter voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 600mA and a transition frequency of 250MHz. Includes a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 625mW. Designed for through-hole mounting and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 250MHz |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
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