2N4403RLRAG
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PNP BJT Transistor, 40V, 600mA, 200MHz, TO-92
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 40V collector-emitter voltage (VCEO) and a maximum collector current of 600mA. Offers a transition frequency of 200MHz and a minimum hFE of 30. Operates within a temperature range of -55°C to 150°C with a power dissipation of 625mW. This through-hole component is RoHS compliant and supplied on a 2000-piece tape and reel.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 30 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92-3 |
| Max Frequency | 200MHz |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
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