2N5306

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2N5306 - Onsemi
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Краткое описание: NPN BJT 25V 1.2A TO-92
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 25V. Offers a high minimum DC current gain (hFE) of 20000 and a maximum collector-emitter saturation voltage of 1.4V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.2mm
hFE Min 20000
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating 1.2A
RoHS Compliant Yes
DC Rated Voltage 25V
Package Quantity 2000
Number of Elements 1
Max Collector Current 1.2A
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 25V
Collector-emitter Voltage-Max 1.4V
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 1.4V

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