2N5416

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2N5416 - Solitron Devices
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Краткое описание: PNP BJT Transistor 300V 1A TO-39 Metal Through Hole
Производитель Solitron Devices
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 300V collector-emitter voltage, 1A maximum collector current, and 10000mW power dissipation. Housed in a 3-pin TO-39 metal package with a maximum height of 6.6mm and diameter of 9.4mm. Operates across a temperature range of -65°C to 200°C.
PCB 3
ECCN EAR99
Type PNP
Jedec TO-39
Category Bipolar Power
Mounting Through Hole
Cage Code 21845
Pin Count 3
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-39
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.67(Max)
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-205-AF
Package Height (mm) 6.6(Max)
Package Diameter (mm) 9.4(Max)
Minimum DC Current Gain 2.5@5mA@10V|3@10mA@10V
Seated Plane Height (mm) 6.6(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 10000mW
Min Operating Temperature -65°C
Maximum DC Collector Current 1A
Maximum Emitter Base Voltage 6V
Maximum Collector Base Voltage 350V
Maximum Collector-Emitter Voltage 300V

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