2N5657G
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NPN BJT Transistor, 350V, 3.7A, TO-225
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) with a 350V Collector-Emitter Breakdown Voltage and 350V Collector-Emitter Voltage (VCEO). Features a maximum collector current of 500mA and a continuous collector current of 3.7A. Operates with a transition frequency of 10MHz and a minimum hFE of 30. Packaged in a TO-225-3 case, this RoHS compliant component offers a maximum power dissipation of 20W and is supplied in bulk packaging.
| RoHS | Compliant |
| hFE Min | 30 |
| Polarity | NPN |
| Frequency | 10MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Halogen Free | Halogen Free |
| Package/Case | TO-225-3 |
| Current Rating | 3.7A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 250V |
| Package Quantity | 500 |
| Power Dissipation | 20W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 10MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 20W |
| Gain Bandwidth Product | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 375V |
| Collector-emitter Voltage-Max | 10V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
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