2N5883G

Производится
2N5883G - Onsemi
Увеличить
Краткое описание: PNP BJT 25A 60V Power Transistor TO-204 (TO-3)
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Power Transistor featuring a 60V collector-emitter breakdown voltage and a 25A continuous collector current. This TO-204 package transistor offers a maximum power dissipation of 200W and a transition frequency of 4MHz. With a minimum hFE of 20 and a collector-emitter saturation voltage of 1V, it is designed for robust power applications. The component is RoHS compliant and operates within a temperature range of -65°C to 200°C.
RoHS Compliant
hFE Min 20
Polarity PNP
Frequency 4MHz
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Max Frequency 4MHz
Current Rating 25A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -60V
Package Quantity 100
Power Dissipation 200W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 4MHz
Max Collector Current 25A
Max Power Dissipation 200W
Gain Bandwidth Product 4MHz
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.