2N6465
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Краткое описание:
NPN BJT Transistor, 100V, 4A, TO-66, Through Hole
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 100V collector-emitter voltage, 4A continuous collector current, and 40W power dissipation. This single-element silicon transistor is housed in a TO-66 metal package (TO-213AA) with 3 pins and a tab. Minimum DC current gain is 15 at 1.5A, with a minimum transition frequency of 5MHz.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | TO-213AA |
| Category | Bipolar Power |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 55464 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Package/Case | TO-66 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.33(Max) |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Weight (g) | 5.84 |
| Package Width (mm) | 17.78 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-213-AA |
| Package Height (mm) | 8.64(Max) |
| Package Length (mm) | 24.43(Max) + 7.36 |
| Radiation Hardening | No |
| Minimum DC Current Gain | [email protected] |
| Seated Plane Height (mm) | 8.64(Max) |
| Maximum Power Dissipation | 40000mW |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 4A |
| Maximum Transition Frequency | 5(Min)MHz |
| Maximum Collector Base Voltage | 110V |
| Maximum Collector-Emitter Voltage | 100V |
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