2N6491G

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2N6491G - Onsemi
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Краткое описание: NPN BJT 80V 15A TO-220 Power Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Power Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features 80V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 15A. Offers a minimum DC current gain (hFE) of 20 and a transition frequency (fT) of 5MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.8W. This RoHS compliant component is supplied in a 50-piece tube.
RoHS Compliant
Width 0.19inch
Height 0.62inch
Length 0.404inch
hFE Min 20
Polarity PNP
Frequency 5MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 5MHz
Current Rating 15A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -80V
Package Quantity 50
Power Dissipation 1.8W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 5MHz
Max Collector Current 15A
Max Power Dissipation 1.8W
Gain Bandwidth Product 5MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 90V
Collector-emitter Voltage-Max 3.5V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 3.5V

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