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N-Channel JFET, 60V, 310mA, 1.6 Ohm, SOT-323, Surface Mount
Дополнительная информация
N-Channel Enhancement Mode Field Effect Transistor, 60V Drain to Source Voltage (Vdss), 310mA Continuous Drain Current (ID), and 1.6Ω Rds On Max. This single-element JFET features a 2.1V Threshold Voltage, 50pF Input Capacitance, and 60ns Turn-Off Delay Time. Packaged in a SOT-323 surface mount case with tin, matte contact plating, it operates from -55°C to 150°C with a 350mW Max Power Dissipation. Supplied on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1.2mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6R |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 300mW |
| Threshold Voltage | 2.1V |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 310mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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