2SA2018TL
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PNP BJT Transistor, 12V VCEO, 500mA IC, 260MHz fT, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -500mA and a collector-emitter breakdown voltage of 12V. Offers a transition frequency of 260MHz and a minimum hFE of 270. Packaged in an EMT3 (SC-75A) surface-mount package with 3 pins, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.9mm |
| Height | 0.7mm |
| Length | 1.7mm |
| hFE Min | 270 |
| Polarity | PNP |
| Frequency | 260MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Max Frequency | 100MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 260MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 260MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -100mV |
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