2SB1707TL
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Краткое описание:
PNP BJT Transistor, 4A IC, 12V VCEO, 250MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Offers a minimum hFE of 270 and a transition frequency of 250MHz. Packaged in a surface-mount TSMT3 (TO-236-3) with 3 pins, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.9mm |
| Length | 2.9mm |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Max Frequency | 100MHz |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -150mV |
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