2SC4617TLS
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NPN BJT Transistor, 50V VCEO, 150mA IC, 180MHz fT, SOT-416
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 150mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 180MHz. Packaged in an SC-75A (SOT-416) surface-mount case with 3 pins. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-416 |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 50V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
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