2SC5242-O

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2SC5242-O - Toshiba
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Краткое описание: NPN Power Transistor 230V 15A TO-3 BJT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction power transistor featuring a 230V collector-emitter breakdown voltage and a 15A maximum collector current. This through-hole mounted component operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 130W. With a transition frequency of 30MHz and a minimum hFE of 80, it is suitable for general-purpose power applications. The transistor is housed in a TO-3 package.
RoHS Not Compliant
Mount Through Hole
Series 2SC5242
hFE Min 80
Polarity NPN
Frequency 30MHz
Lead Free Contains Lead
Packaging Rail/Tube
Package/Case TO-3
Current Rating 15A
RoHS Compliant No
DC Rated Voltage 230V
Package Quantity 50
Power Dissipation 130W
Number of Elements 1
Transition Frequency 30MHz
Max Collector Current 15A
Max Power Dissipation 130W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 230V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 230V
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 400mV

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