2SC5658RM3T5G
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Краткое описание:
NPN BJT 50V 0.15A SOT-723 Transistor
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 0.15A maximum DC collector current. This single-element transistor offers 260mW maximum power dissipation and a minimum DC current gain of 215 at 1mA/6V. Housed in a compact 3-pin SOT-723 plastic package with a 0.4mm pin pitch, it operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Yes |
| Category | Bipolar Small Signal |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541210080 |
| Package/Case | SOT-723 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.4 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 0.8 |
| Package Description | Small Outline Diode Package |
| Package Family Name | SOT-723 |
| Package Height (mm) | 0.5 |
| Package Length (mm) | 1.2 |
| Radiation Hardening | No |
| Minimum DC Current Gain | 215@1mA@6V |
| Seated Plane Height (mm) | 0.5 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 260mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 0.15A |
| Maximum Emitter Base Voltage | 7V |
| Maximum Transition Frequency | 180(Typ)MHz |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 50V |
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