2SC5659T2LP
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NPN BJT Transistor, 25V VCEO, 50mA IC, 300MHz, SOT-723
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V Collector-Emitter Breakdown Voltage (VCEO) and 50mA Continuous Collector Current (IC). Operates with a 300MHz transition frequency and offers a minimum hFE of 82. Housed in a SOT-723 surface mount package, this RoHS compliant component supports a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 82 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-723 |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | 25V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
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