2SC6127

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2SC6127 - Toshiba
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Краткое описание: NPN BJT 800V 0.05A TO-252AB Surface Mount Transistor
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features an 800V collector-emitter voltage and 0.05A maximum DC collector current. Housed in a 3-pin TO-252AB (New PW-Mold) package with a tab. Maximum power dissipation is 1000mW. Operates within a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-252AB
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case New PW-Mold
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Package Weight (g) 0.36
Package Width (mm) 5.5
Package Height (mm) 2.3
Package Length (mm) 6.5
Radiation Hardening No
Minimum DC Current Gain 15@7mA@5V
Seated Plane Height (mm) 2.4
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.05A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 15(Typ)MHz
Maximum Collector Base Voltage 800V
Maximum Collector-Emitter Voltage 800V

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