2STC4467
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Краткое описание:
120V 8A NPN Si Power BJT Transistor 20MHz TO-3P
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 120V. Operates with a transition frequency of 20MHz and a maximum power dissipation of 80W. Housed in a TO-3P package with 3 pins, this RoHS compliant component is designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | 2STC4467 |
| Polarity | NPN |
| Frequency | 20MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Max Frequency | 20MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 80W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 20MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 8A |
| Max Power Dissipation | 80W |
| Gain Bandwidth Product | 20MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
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