2STN1360
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NPN BJT Transistor, 60V, 3A, 130MHz, SOT-223, SM
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage and a 3A continuous collector current rating. Operates with a maximum power dissipation of 1.6W and a transition frequency of 130MHz. Packaged in a SOT-223 surface mount case with tin, matte contact plating. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| hFE Min | 80 |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 130MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 80V |
| Package Quantity | 1000 |
| Power Dissipation | 1.6W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.6W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
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