2STR1160
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NPN BJT Transistor, 60V, 1A, SOT-23, 500mW, SMD
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a low collector-emitter saturation voltage of 430mV and a minimum hFE of 180. Packaged in a compact SOT-23 surface mount case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 500mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.3mm |
| Length | 3.04mm |
| hFE Min | 180 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 430mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 430mV |
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